Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-31
2009-11-03
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S723000, C438S242000, C438S401000, C438S412000, C438S709000, C257SE21024
Reexamination Certificate
active
07611944
ABSTRACT:
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width.
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Freeman Eric
Lee John
Liu Zengtao “Tony”
Nielsen Russell
Tran Luan C.
Knobbe Martens Olson & Bear LLP
Lee Kyoung
Micro)n Technology, Inc.
Richards N Drew
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