Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2005-08-23
2005-08-23
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S781000, C257S750000, C257S758000, C257S775000
Reexamination Certificate
active
06933614
ABSTRACT:
An integrated circuit die (10) has a copper contact (16, 18), which, upon exposure to the ambient air, forms a native copper oxide. An organic material is applied to the copper contact which reacts with the native copper oxide to form an organic coating (12, 14) on the copper contact in order to prevent further copper oxidation. In this manner, further processing at higher temperatures, such as those greater than 100 degrees Celsius, is not inhibited by excessive copper oxidation. For example, due to the organic coating, the high temperature of the wire bond process does not result in excessive oxidation which would prevent reliable wire bonding. Thus, the formation of the organic coating allows for a reliable and thermal resistance wire bond (32, 34). Alternatively, the organic coating can be formed over exposed copper at any time during the formation of the integrated circuit die to prevent or limit the formation of copper oxidation.
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Harun Fuaida
Hess Kevin J.
Lee Chu-Chung
Tan Lan Chu
Yong Cheng Choi
Chiu Joanna G.
Clark Jasmine
Dolezal David G.
Freescale Semiconductor Inc.
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