Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-01-10
2006-01-10
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S207000
Reexamination Certificate
active
06985394
ABSTRACT:
An integrated circuit device may include a pair of first and second input/output lines on a substrate and a precharge circuit connected to the first and second input/output lines. More particularly, portions of the first and second input/output lines may extend in a parallel direction along first lengths thereof, portions of the first and second input/output lines may cross one another in a twist region so that portions of the first and second input/output lines in the twist region extend in directions different than the parallel direction, and portions of the first and second input/output lines may extend in the parallel direction along second lengths. Accordingly, relative positions of the first and second input/output lines may be reversed in the first and second lengths thereof. In addition, the precharge circuit may be connected to portions of the first and second input/output lines in the twist region extending in the directions different than the parallel direction, and the precharge circuit may be configured to provide that the first and second input/output lines have a same electrical potential responsive to an enable signal. Related memory devices are also discussed.
REFERENCES:
patent: 6175532 (2001-01-01), Ooishi
patent: 6256245 (2001-07-01), Kwak
patent: 6816416 (2004-11-01), Won
patent: 2003/0214866 (2003-11-01), Kyung
patent: 2004/0085841 (2004-05-01), Lim et al.
patent: 0057284 (2002-07-01), None
Phung Anh
Samsung Electronics Co,. Ltd
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