Integrated circuit devices including a capacitor

Details Integrated circuit devices including a capacitor Integrated circuit devices including a capacitor

2007-04-24

2007-04-24

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S296000, C257S751000

Reexamination Certificate

active

11168126

ABSTRACT:
Integrated circuit devices include an integrated circuit substrate and a conductive lower electrode layer of a capacitor on the integrated circuit substrate. A dielectric layer is on the lower electrode layer and a conductive upper electrode layer of the capacitor is on the dielectric layer. A first intermetal dielectric layer is on the upper electrode layer. The first intermetal dielectric layer includes at least one via hole extending to the upper electrode layer. A first conductive interconnection layer is on the at least one via hole of the first intermetal dielectric layer. A second intermetal dielectric layer is on the first intermetal dielectric layer. The second intermetal dielectric layer includes at least one via hole extending to the first conductive interconnection layer and at least partially exposing the at least one via hole of the first intermetal dielectric layer. A second conductive interconnection layer is provided in the at least one via hole of the second intermetal dielectric layer that electrically contacts the first conductive interconnection layer.

REFERENCES:
patent: 5851868 (1998-12-01), Kim
patent: 6124199 (2000-09-01), Gambino et al.
patent: 6278148 (2001-08-01), Watanabe
patent: 6399495 (2002-06-01), Tseng et al.
patent: 6940114 (2005-09-01), Oh et al.
patent: 2001/0022369 (2001-09-01), Fukuda et al.
patent: 2003/0040161 (2003-02-01), Schrenk et al.
patent: 1 130 654 (2001-09-01), None
patent: 1020030037215 (2003-05-01), None
Notice to File Response for corresponding Korean Application No. 2002-0078905 dated Dec. 17, 2004 (English Translation).

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