Methods of erasing flash memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185180, C365S185330, C365S185310, C365S185250, C365S218000

Reexamination Certificate

active

11215963

ABSTRACT:
Methods for erasing flash memory using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.

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Lee et al., “Using Erase Self-Detrapped Effect To Eliminate the Flash Cell Program/Erase Cycling VthWindow Close,” IEEE, 1999.

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