Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-12
2010-10-19
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S350000, C257S354000, C257SE29117, C257SE29273, C257SE29286
Reexamination Certificate
active
07816735
ABSTRACT:
Integrated circuit devices are provided including a first single-crystalline layer and an insulating layer pattern on the first single-crystalline layer. The insulating layer pattern has an opening therein that partially exposes the first single-crystalline layer. A seed layer is in the opening. A second single-crystalline layer is on the insulating layer pattern and the seed layer. The second single-crystalline layer has a crystalline structure substantially the same as that of the seed layer. A transcription-preventing pattern is on the second single-crystalline layer and a third single-crystalline layer on the transcription-preventing pattern and the second single-crystalline layer. The transcription-preventing pattern is configured to limit transcription of defective portions in the second single-crystalline layer into the third single-crystalline layer.
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Choi Si-Young
Jung In-Soo
Kang Pil-Kyu
Lee Byeong-Chan
Lee Jong-Wook
Lopez Fei Fei Yeung
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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