Integrated circuit devices having uniform silicide junctions

Details Integrated circuit devices having uniform silicide junctions Integrated circuit devices having uniform silicide junctions

2007-09-11

2010-06-15

Le, Dung A (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S377000, C257S384000, C257S576000, C257SE29255, C257SE21165

Reexamination Certificate

active

07737512

ABSTRACT:
Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.

REFERENCES:
patent: 5783475 (1998-07-01), Ramaswami
patent: 5814537 (1998-09-01), Maa et al.
patent: 6693013 (2004-02-01), Bae et al.
patent: 09-325037 (1997-11-01), None
Office Action issued by the Chinese Patent Office corresponding to Chinese Patent Application No. 03136040.8, mailed Jun. 30, 2006.

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