Integrated circuit devices having self-aligned contact...

Details Integrated circuit devices having self-aligned contact... Integrated circuit devices having self-aligned contact...

2006-05-16

2006-05-16

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S763000, C257S764000

Reexamination Certificate

active

07045842

ABSTRACT:
An integrated circuit device, e.g., a memory device, includes a substrate, a first insulation layer on the substrate, and a contact pad disposed in the first insulation layer in direct contact with the substrate. A second insulation layer is disposed on the first insulation layer. A conductive pattern, e.g., a damascene bit line, is disposed in the second insulation layer. A conductive plug extends through the second insulation layer to contact the contact pad and is self-aligned to the conductive pattern. An insulation film may separate the conductive pattern and the conductive plug. A glue layer may be disposed between the conductive pattern and the second insulation layer. The device may further include a third insulation layer on the second insulation layer and the conductive pattern, and the conductive plug may extend through the second and third insulation layers.

REFERENCES:
patent: 5852481 (1998-12-01), Hwang
patent: 5856704 (1999-01-01), Schuele
patent: 6291335 (2001-09-01), Schnabel et al.
patent: 6344389 (2002-02-01), Bronner et al.
patent: 2002/0025689 (2002-02-01), Yang et al.
patent: 10-027889 (1998-01-01), None
patent: 10027889 (1999-03-01), None
patent: 1020000027544 (2000-05-01), None
patent: 1020010059019 (2001-07-01), None
patent: 1020010076166 (2001-08-01), None
Office Action, Korean Application No. 10-2003-0009926, Feb. 21, 2005.

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