Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-02
2009-02-24
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S381000, C257S382000, C257S300000, C257S754000, C257SE27016
Reexamination Certificate
active
07495292
ABSTRACT:
Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.
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Choi Jae-Hyoung
Choi Jeong-Sik
Chung Jung-Hee
Kim Sung-Tae
Oh Se-Hoon
Ho Tu-Tu V
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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