Integrated circuit devices having contact holes exposing...

Details Integrated circuit devices having contact holes exposing... Integrated circuit devices having contact holes exposing...

2006-04-25

2006-04-25

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S369000

Reexamination Certificate

active

07034365

ABSTRACT:
Integrated circuit devices are provided including an integrated circuit substrate and first, second and third spaced apart insulating regions in the integrated circuit substrate that define first and second active regions. A first gate electrode is provided on the first active region. The first gate electrode has a first portion on the first active region that extends onto the first insulating region and a second portion at an end of the first portion on the first insulating region. A second gate electrode is provided on the second active region. An insulating layer is provided on the first, second and third active regions defining a first gate contact hole that exposes at least a portion of the second portion of the first gate electrode. The first gate electrode is free of a gate contact hole on the first portion of the first gate electrode. A second gate contact hole is provided on the second active region that exposes at least a portion of the second gate electrode. Related methods of fabricating integrated circuit devices are also provided.

REFERENCES:
patent: 6223331 (2001-04-01), Juengling
patent: 6313508 (2001-11-01), Kobayashi
patent: 6815771 (2004-11-01), Kimura

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