Integrated circuit device, and method of fabricating same

Details Integrated circuit device, and method of fabricating same Integrated circuit device, and method of fabricating same

2008-02-12

2010-06-15

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S157000, C438S587000, C438S307000, C257SE21660

Reexamination Certificate

active

07736959

ABSTRACT:
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to integrated circuit device including SOI logic transistors and SOI memory transistors, and method for fabricating such a device. In one embodiment, integrated circuit device includes memory portion having, for example, PD or FD SOI memory cells, and logic portion having, for example, high performance transistors, such as Fin-FET, multiple gate transistors, and/or non-high performance transistors (such as single gate transistors that do not possess the performance characteristics of the high performance transistors). In another aspect, the present invention is directed to a method of manufacture of such integrated circuit device.

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