Integrated circuit design system

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C716S030000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07451411

ABSTRACT:
The present invention provides an integrated circuit design system, comprising providing a design system in a computer system, providing a layout design tool coupled to the design system, wherein the layout design tool creates an interconnect structure to satisfy electromigration criteria, and manipulating a design database within the design system.

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Hau-Riege, “The effect of interlevel dielectric on the critical tensile stress to void nucleation for the reliability of Cu interconnects”, Journal of Applied Physics, Oct. 2004, pp. 1-5, vol. 96, No. 7.
Hau-Riege, “The effect of low-K ILD on the electromigration reliability of Cu interconnects with different line lengths”.
Blech, “Stress generation by electromigration”, Applied Physics Letters, Aug. 1979, pp. 131-133, vol. 29, No. 3.

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