Integrated circuit containing polysilicon gate transistors...

Details Integrated circuit containing polysilicon gate transistors... Integrated circuit containing polysilicon gate transistors...

2006-12-12

2006-12-12

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S275000, C438S592000

Reexamination Certificate

active

07148097

ABSTRACT:
A method for manufacturing an integrated circuit10having transistors20, 30of two threshold voltages where protected transistor stacks270have a gate protection layer220that are formed with the use of a single additional mask step. Also, an integrated circuit10having at least one polysilicon gate transistor20and at least one FUSI metal gate transistor30.

REFERENCES:
patent: 6890823 (2005-05-01), Lee et al.
patent: 6929992 (2005-08-01), Djomehri et al.
patent: 6977194 (2005-12-01), Belyansky et al.
patent: 2006/0121633 (2006-06-01), Fang et al.
Haowen Bu, et al. “A Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor” U.S. Appl. No. 10/808,168, filed Mar. 24, 2004.
Jiong-Ping Lu, et al., “A Method for Manufacturing a Semiconductor Device Having a Silicided Gate Electrode and a Method for Manufacturing an Integrated Circuit Including the Same” U.S. Appl. No. 10/810,759, filed Mar. 26, 2004.
Shaofeng Yu. et al., “A Method for Manufacturing a Silicided Gate Electrode Using a Buffer Layer” U.S. Appl. No. 11/007,569, filed Dec. 8, 2004.

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