Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Patent
1994-02-04
1995-12-26
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
257350, 257774, H01L 2348, H01L 2940
Patent
active
054790484
ABSTRACT:
An SOI/DI IC chip including a handle wafer in the form of a section of silicon substrate contiguous with the layer of insulation beneath the silicon slice containing the device regions separated by trenches filled with low-conductivity polysilicon dielectric. One of the trenches is etched through the layer of insulation, and the polysilicon in that trench is doped to provide desired electrical conductivity to establish electrical contact with the handle wafer. Metallization is applied over the top of this one trench to make possible electrical connection to the handle wafer from above the chip by use of conventional wiring techniques.
REFERENCES:
patent: 4924284 (1990-05-01), Beyer et al.
patent: 5218213 (1993-06-01), Gaul et al.
patent: 5240876 (1993-08-01), Gaul et al.
patent: 5281840 (1994-01-01), Sarma
Creighton Oliver
Yallup Kevin
Analog Devices Inc.
Hille Rolf
Ostrowski David
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