Integrated circuit chip supported by a handle wafer and provided

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

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Details

257350, 257774, H01L 2348, H01L 2940

Patent

active

054790484

ABSTRACT:
An SOI/DI IC chip including a handle wafer in the form of a section of silicon substrate contiguous with the layer of insulation beneath the silicon slice containing the device regions separated by trenches filled with low-conductivity polysilicon dielectric. One of the trenches is etched through the layer of insulation, and the polysilicon in that trench is doped to provide desired electrical conductivity to establish electrical contact with the handle wafer. Metallization is applied over the top of this one trench to make possible electrical connection to the handle wafer from above the chip by use of conventional wiring techniques.

REFERENCES:
patent: 4924284 (1990-05-01), Beyer et al.
patent: 5218213 (1993-06-01), Gaul et al.
patent: 5240876 (1993-08-01), Gaul et al.
patent: 5281840 (1994-01-01), Sarma

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