Integrated circuit capacitors including barrier layers having gr

Details Integrated circuit capacitors including barrier layers having gr Integrated circuit capacitors including barrier layers having gr

1997-09-30

1999-04-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257750, 257751, H01L 2976, H01L 2994, H01L 2348, H01L 2352

Patent

active

058922547

ABSTRACT:
A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

REFERENCES:
patent: 5569961 (1996-10-01), Lee
patent: 5612574 (1997-03-01), Summerfelt et al.
patent: 5638319 (1997-06-01), Onishi et al.
patent: 5731634 (1998-03-01), Matsuo et al.
patent: 5736449 (1998-04-01), Miki et al.
Lesaicherre et al., "A Gbit-Scale DRAM Stacked Capacitor With ECR MOCVD SrTiO.sub.3 Over RIE Patterned RuO.sub.2 /TiN Storage Nodes", Integrated Ferroelectrics, vol. 11, 1995, pp. 81-100.
"At IEDM, Mitsubishi discusses 1-Gbit process; x-ray litho used", Solid State Technology, Dec. 1995, p. 36.

Affiliated with

Also associated with

Rating

Integrated circuit capacitors including barrier layers having gr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit capacitors including barrier layers having gr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit capacitors including barrier layers having gr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1373801