Integrated circuit capacitors having a dielectric layer...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S309000

Reexamination Certificate

active

07042042

ABSTRACT:
Integrated circuit capacitors are provided having an electrically insulating electrode support layer having an opening therein on an integrated circuit substrate. A U-shaped lower electrode is provided in the opening and a first capacitor dielectric layer extends on an inner surface and an outer portion of the U-shaped lower electrode. A second capacitor dielectric layer extends between the outer portion of the U-shaped lower electrode and the first capacitor dielectric and also extends between the outer portion of the U-shaped lower electrode and an inner sidewall of the opening. An upper electrode extends on the first dielectric layer.

REFERENCES:
patent: 5023683 (1991-06-01), Yamada
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5336917 (1994-08-01), Kohyama
patent: 6130128 (2000-10-01), Lin
patent: 6187625 (2001-02-01), Lin et al.
patent: 6271083 (2001-08-01), Lou
patent: 6274426 (2001-08-01), Lee et al.
patent: 6573553 (2003-06-01), Nakamura
patent: 10-50951 (1998-02-01), None
Arima, H., et al., “A Novel Stacked Capacitor Cell with Dual Cell Plate for 64 Mb DRAMs”, IEDM 1990, pp. 651-654.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit capacitors having a dielectric layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit capacitors having a dielectric layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit capacitors having a dielectric layer... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3610314

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.