Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2006-05-09
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S309000
Reexamination Certificate
active
07042042
ABSTRACT:
Integrated circuit capacitors are provided having an electrically insulating electrode support layer having an opening therein on an integrated circuit substrate. A U-shaped lower electrode is provided in the opening and a first capacitor dielectric layer extends on an inner surface and an outer portion of the U-shaped lower electrode. A second capacitor dielectric layer extends between the outer portion of the U-shaped lower electrode and the first capacitor dielectric and also extends between the outer portion of the U-shaped lower electrode and an inner sidewall of the opening. An upper electrode extends on the first dielectric layer.
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Arima, H., et al., “A Novel Stacked Capacitor Cell with Dual Cell Plate for 64 Mb DRAMs”, IEDM 1990, pp. 651-654.
Won Seok-jun
Yoo Cha-young
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Weiss Howard
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