Integrated circuit capacitor structure

Details Integrated circuit capacitor structure Integrated circuit capacitor structure

2007-06-12

2007-06-12

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S250000, C438S253000, C438S393000, C257SE21008

Reexamination Certificate

active

10688077

ABSTRACT:
Embodiments of the invention include a MIM capacitor having a high capacitance with improved manufacturability. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

REFERENCES:
patent: 5194932 (1993-03-01), Kurisu
patent: 5208726 (1993-05-01), Apel
patent: 5879985 (1999-03-01), Gambino et al.
patent: 5926359 (1999-07-01), Greco et al.
patent: 6479391 (2002-11-01), Morrow et al.
patent: 6534374 (2003-03-01), Johnson et al.
patent: 6784478 (2004-08-01), Merchant et al.
patent: 6989313 (2006-01-01), Park
patent: 2001-3343 (2001-01-01), None

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