Integrated circuit capacitor having antireflective dielectric

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S393000, C438S396000, C438S952000

Reexamination Certificate

active

07118959

ABSTRACT:
A capacitor (100) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor (100) has conductive top and bottom electrodes (140, 144) and a nonconductive capacitor dielectric (142). In one example, the dielectric (142) includes first and second thin dielectric layers (112, 114) that sandwich a layer of antireflective material (118). The thin layers (112, 114) provide the dielectric behavior necessary for the capacitor while the antireflective layer (118) promotes reduced feature sizes by mitigating reflected standing waves, among other things.

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