Integrated circuit and process for fabricating thereof

Details Integrated circuit and process for fabricating thereof Integrated circuit and process for fabricating thereof

2011-08-16

2011-08-16

Andújar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

07998857

ABSTRACT:
A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.

REFERENCES:
patent: 2003/0226854 (2003-12-01), Lee
patent: 2004/0248403 (2004-12-01), Dubin et al.
patent: 2005/0064702 (2005-03-01), Wang et al.
patent: 2006/0022304 (2006-02-01), Rzeznik
patent: 2006/0068600 (2006-03-01), Toyoda et al.
patent: 2006/0166448 (2006-07-01), Cohen

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