Integrated circuit and method of manufacturing an integrated...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S276000, C257SE21320

Reexamination Certificate

active

07622354

ABSTRACT:
An integrated circuit including a memory device comprises an array portion comprising memory cells and conductive lines, an upper surface of the conductive lines being disposed beneath a surface of a semiconductor substrate, and a support portion comprising transistors of a first type, the transistors of the first type comprising a first gate electrode including vertical portions that are vertically adjacent to a channel of the transistor of the first type.

REFERENCES:
patent: 6867994 (2005-03-01), Tsukikawa
patent: 7034408 (2006-04-01), Schloesser
patent: 2004/0184298 (2004-09-01), Takahashi et al.

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