Integrated circuit and method of fabrication thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

Other Related Categories

C438S233000, C257S296000, C257S327000, C257S311000

Type

Reexamination Certificate

Status

active

Patent number

08058123

Description

ABSTRACT:
A method of forming an integrated circuit structure comprising the steps of forming a first and second device region on a surface of a wafer, forming a spacer of a first width on a sidewall of a first gate stack in the first device region, forming a spacer of a second width on a sidewall of a second gate stack in the second device region, with the first width being different from the second width.

REFERENCES:
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6867428 (2005-03-01), Besser et al.
patent: 6921913 (2005-07-01), Yeo et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 7172933 (2007-02-01), Huang et al.
patent: 2002/0074579 (2002-06-01), Hasunuma
patent: 2004/0126998 (2004-07-01), Feudel et al.
patent: 2004/0262784 (2004-12-01), Doris et al.
patent: 2006/0145289 (2006-07-01), Yu
patent: 2006/0163647 (2006-07-01), Toda et al.
patent: 2006/0244074 (2006-11-01), Chen et al.
patent: 2006/0246672 (2006-11-01), Chen et al.
patent: 2007/0001233 (2007-01-01), Schwan et al.
patent: 2007/0013010 (2007-01-01), Wang et al.
patent: 2007/0057287 (2007-03-01), Lin et al.
patent: 2008/0003746 (2008-01-01), Curello et al.
patent: 2008/0142879 (2008-06-01), Chong et al.
patent: 2009/0189193 (2009-07-01), Curello et al.
patent: WO2004/068586 (2004-08-01), None
patent: WO2005/017964 (2005-02-01), None
patent: WO2005/043591 (2005-05-01), None

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