Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-29
2011-11-15
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S233000, C257S296000, C257S327000, C257S311000
Reexamination Certificate
active
08058123
ABSTRACT:
A method of forming an integrated circuit structure comprising the steps of forming a first and second device region on a surface of a wafer, forming a spacer of a first width on a sidewall of a first gate stack in the first device region, forming a spacer of a second width on a sidewall of a second gate stack in the second device region, with the first width being different from the second width.
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Cong Hai
Hsia Liang Choo
Liu Jinping
See Alex K H
Zhou Binbin
Globalfoundries Singapore Pte. Ltd.
Horizon IP Pte Ltd
Parker John M
Smith Matthew
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