Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-12-10
2000-09-26
Smith, Matthew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438239, 438241, 438253, 438254, H01L 21283
Patent
active
061241636
ABSTRACT:
A multilayer decoupling capacitor structure is disclosed, having a first decoupling capacitor with one electrode formed in a conductively doped silicon substrate and a second electrode made of conductively doped polysilicon. A third bifurcated conductive layer disposed above the second electrode in conjunction with a fourth conductive layer above the third layer form a second and third decoupling capacitor. The first decoupling capacitor serves to decouple circuitry associated with dynamic random access memory cells, while the second and third decoupling capacitors provide decoupling for further circuitry.
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Casper Stephen L.
Duesman Kevin G.
Lowrey Tyler A.
Shirley Brian M.
Micro)n Technology, Inc.
Smith Matthew
Yevsikov V.
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