Integrated capacitors fabricated with conductive metal oxides

Details Integrated capacitors fabricated with conductive metal oxides Integrated capacitors fabricated with conductive metal oxides

2005-03-22

2005-03-22

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S650000, C438S663000, C427S126500

Reexamination Certificate

active

06869877

ABSTRACT:
A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

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