Integrated capacitors fabricated with conductive metal oxides

Details Integrated capacitors fabricated with conductive metal oxides Integrated capacitors fabricated with conductive metal oxides

2005-09-06

2005-09-06

Niebling, John F. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S303000

Reexamination Certificate

active

06940112

ABSTRACT:
A capacitor for a memory device is formed with a conductive oxide for a bottom electrode. The conductive oxide (RuOx) is deposited under low temperatures as an amorphous film. As a result, the film is conformally deposited over a three dimensional, folding structure. Furthermore, a subsequent polishing step is easily performed on the amorphous film, increasing wafer throughput. After deposition and polishing, the film is crystallized in a non-oxidizing ambient.

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