Integrated assist features for epitaxial growth

Details Integrated assist features for epitaxial growth Integrated assist features for epitaxial growth

2011-08-23

2011-08-23

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S692000, C438S697000, C438S700000, C257SE21304, C257SE21305

Reexamination Certificate

active

08003539

ABSTRACT:
A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.

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