Integrated ashing and implant annealing method

Details Integrated ashing and implant annealing method Integrated ashing and implant annealing method

2005-05-24

2005-05-24

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C134S001300, C430S329000, C438S725000, C438S780000, C438S781000

Reexamination Certificate

active

06897162

ABSTRACT:
After ion implantation, thermal ashing is conducted in a high oxygen concentration at a pressure of between about 100 to about 760 Torr at below 700° C. to remove the resist. Since photoresist consists of Carbon (C), Hydrogen (H) and Oxygen (O), the products of reaction of the thermal oxidation of the photoresist include CO2and H2O. Since the process includes a substantial amount of oxygen, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate.

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Sang - Hun et al., “Application of Atmospheric Torch Plasma to Resist and Polymer Removals”, Proceedings of the Symposium on Dry process, pp. 103-108, Nov (2000), Tokyo.

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