Integrate circuit device including expanded contact holes and re

Details Integrate circuit device including expanded contact holes and re Integrate circuit device including expanded contact holes and re

1998-07-06

1999-09-07

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 257295, 257310, H01L 2976, H01L 27108, H01L 2900

Patent

active

059491000

ABSTRACT:
A method of forming an integrated circuit device includes the steps of forming a first insulating layer on an integrated circuit substrate, forming a first capacitor electrode on the insulating layer opposite the substrate, and forming a second insulating layer on the first capacitor electrode and on the insulating layer opposite the substrate. A contact hole is formed in the second insulating layer thus exposing a surface of the first capacitor electrode. In particular, the contact hole exposes an edge portion of the first capacitor electrode and extends beyond the edge portion of the first capacitor electrode. A capacitor dielectric layer is formed on the exposed portion of the first capacitor electrode wherein the capacitor dielectric layer extends beyond the edge portion of the first capacitor electrode. A second capacitor electrode is formed on the dielectric layer wherein the second capacitor electrode extends beyond the edge portion of the first capacitor electrode. Related structures are also discussed.

REFERENCES:
patent: 4918503 (1990-04-01), Okuyama
patent: 4931897 (1990-06-01), Tsukamoto et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5486713 (1996-01-01), Koyama
patent: 5554861 (1996-09-01), Mano et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5763300 (1990-06-01), Park et al.

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