Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-05-10
1992-12-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, 257567, 257577, H01L 2702
Patent
active
051722097
ABSTRACT:
An integral Bi-CMOS logic circuit includes a pair of first transistors and a pair of second transistors. The pair of the first transistors includes a P-type MOS transistor receiving an input signal through its gate, and an NPN-type bipolar transistor with its base connected to the drain of the P-type MOS transistor outputting a first output signal. The pair of the second transistors includes an N-type MOS transistor receiving the input signal through its gate, and a PNP bipolar transistor with its base connected to the drain of the N-type MOS transistor outputting the first output signal. A final output signal is outputted through a common emitter of the bipolar transistors.
Prenty Mark V.
Samsung Electronics Co,. Ltd.
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