Insulation structure for high temperature conditions and...

Details Insulation structure for high temperature conditions and... Insulation structure for high temperature conditions and...

2011-08-16

2011-08-16

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S026000, C438S785000, C257SE21001

Reexamination Certificate

active

07998879

ABSTRACT:
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.

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