Insulation layer structure and method for making the same

Details Insulation layer structure and method for making the same Insulation layer structure and method for making the same

1998-11-19

2000-11-21

Pham, Long

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438770, 438981, 148DIG43, 148DIG163, H01L 218234

Patent

active

061502200

ABSTRACT:
A dual thickness gate insulation layer, for use with, e.g., a dual gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is formed using a more simplified method and improves the reliability. An impurity layer is formed in the semiconductor substrate, and the impurity layer includes a first portion and a second portion. An insulation layer is grown in the semiconductor substrate, and the insulation layer includes a first layer and a second layer which are different from each other in thickness. The present invention simplifies the insulation layer fabricating steps and improves product reliability.

REFERENCES:
patent: 4151010 (1979-04-01), Goth
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4851370 (1989-07-01), Doklan et al.
patent: 5360769 (1994-11-01), Thakur et al.
patent: 5497021 (1996-03-01), Tada
patent: 5881085 (1999-03-01), Jewell

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