Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-19
1999-09-28
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257405, 257411, 257629, 257645, H01L 29788
Patent
active
059593296
ABSTRACT:
The present invention provides an insulating film formed on a surface of a substrate and made of a material containing oxygen, wherein a charge correction is carried out at a 1s peak position of a carbon adsorbed on a surface of the insulating film, and relative amounts between first to fourth peaks obtained when an oxygen 1s peak of the insulating film is decomposed by a same half width of 1.208 eV into a first peak at the oxygen 1s peak site obtained from an .alpha.-quartz crystal charge corrected similarly, and second to fourth peaks at positions of +0.87 eV, -0.35 eV and -0.83 eV, respectively from the oxygen 1s peak position, have relationship of that the third peak is higher than the second and fourth peaks, and the first peak is higher than the third peak, when a portion about 1 nm thick from the surface of the substrate of the insulating film is analyzed by a photoelectronic spectral method for an photoelectron extracting angle of 15.degree. or less.
REFERENCES:
patent: 5122847 (1992-06-01), Kamiya et al.
Yoshio Murakami, et al., "Effect of Oxidation Ambient on the Dielectric Breakdown Characteristics of Thermal Oxide Films of Silicon", J. Appl. Phys., vol. 75, No. 10, pp. 5302-5305, May 15, 1994.
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, pp. 264-266, 1995, Hideki Satake, et al., "Reliability of Structurally Modified Ultra-Thin Gate Oxides".
Ozawa Yoshio
Takahashi Mamoru
Tomita Hiroshi
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
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