Insulating film forming method capable of enhancing adhesion...

Details Insulating film forming method capable of enhancing adhesion... Insulating film forming method capable of enhancing adhesion...

2007-04-24

2007-04-24

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S736000, C438S778000, C438S508000, C257S760000

Reexamination Certificate

active

10899045

ABSTRACT:
A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

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