Insulating film forming method and substrate processing method

Details Insulating film forming method and substrate processing method Insulating film forming method and substrate processing method

2011-03-29

2011-03-29

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S770000, C438S787000, C438S791000

Reexamination Certificate

active

07915179

ABSTRACT:
In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.

REFERENCES:
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6669825 (2003-12-01), Ohmi et al.
patent: 7166185 (2007-01-01), Murakawa et al.
patent: 2002/0197883 (2002-12-01), Niimi et al.
patent: 11 204517 (1999-07-01), None
patent: 2003 297822 (2003-10-01), None
patent: 2004 119899 (2004-04-01), None
patent: 2000-0013294 (2000-03-01), None
patent: 2004-0086384 (2004-10-01), None
patent: WO 03/107399 (2003-12-01), None

Affiliated with

Also associated with

Rating

Insulating film forming method and substrate processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulating film forming method and substrate processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating film forming method and substrate processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2752815