Insulated gate type semiconductor device and method for...

Details Insulated gate type semiconductor device and method for... Insulated gate type semiconductor device and method for...

2008-04-22

2008-04-22

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21384

Reexamination Certificate

active

11653404

ABSTRACT:
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

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Semiconductor Handbook, 1981, pp. 429-430.
Wolf, S. et al., Silicon Processing for the VLSI Era, Vol. 1, Lattice Press, 1986, p. 384.

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