Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-06
2007-02-06
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000
Reexamination Certificate
active
10984788
ABSTRACT:
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
REFERENCES:
patent: 5396093 (1995-03-01), Lu
patent: 5489790 (1996-02-01), Lage
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6437399 (2002-08-01), Huang
patent: 6469345 (2002-10-01), Aoki et al.
patent: 6541818 (2003-04-01), Pfirsch et al.
patent: 6576953 (2003-06-01), Hirler
patent: 8-23092 (1996-01-01), None
patent: 9-246550 (1997-09-01), None
patent: 2000-277531 (2000-10-01), None
Semiconductor Handbook, 1981, pp. 429-430.
Wolf, S. et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, p. 384.
Inagawa Hiroshi
Machida Nobuo
Oishi Kentaro
Chaudhari Chandra
Hitachi Tobu Semiconductor Ltd.
Miles & Stockbridge P.C.
Renesas Technology Corp.
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