Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2005-02-22
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06858896
ABSTRACT:
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
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Stanley wolf Silicon Processing for the VSLI Era vol. 1 Lattice Press 1986 p. 384.*
Semiconductor Handbook, 1981, pp. 429-430.
Inagawa Hiroshi
Machida Nobuo
Oishi Kentaro
Blum David S.
Hitachi Tobu Semiconductor Ltd.
Miles & Stockbridge P.C.
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