Ceramic substrate

Stock material or miscellaneous articles – Web or sheet containing structurally defined element or... – Composite having voids in a component

Reexamination Certificate

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C219S510000, C428S315700

Reexamination Certificate

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06936343

ABSTRACT:
An object of the present invention is to provide a ceramic substrate that is superior in temperature rising/dropping characteristics and breakdown voltage at a high temperature, has a small warp amount, and is best as a substrate for semiconductor-producing/examining devices. The ceramic substrate of the present invention is a ceramic substrate having a conductor formed on the surface thereof or inside thereof, characterized in that said ceramic substrate is having 15×1011or less pores which have a diameter of 0.5 μm or more per m2.

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