Insulated gate-type semiconductor device and manufacturing...

Details Insulated gate-type semiconductor device and manufacturing... Insulated gate-type semiconductor device and manufacturing...

2011-07-05

2011-07-05

Matthews, Colleen A (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C257SE21384, C257SE21410

Reexamination Certificate

active

07972928

ABSTRACT:
This invention has a purpose to provide an insulated gate-type semiconductor device and its manufacturing method in which a decrease in gate insulation dielectric strength voltage and a reduction in manufacturing costs are both achieved. First, (a) a CZ bulk substrate is prepared. Next, (b) P−diffused layer and N+diffused layer31are formed by executing processes such as ion implantation and thermal diffusion treatment. Further (c) a gate trench is formed by reactive ion etching. Next, (d) a gate insulation film containing carbon of 1.0×1018atoms/cm3is formed on the wall face of a gate trench according to a CVD method and, annealing is subsequently performed. As a consequence, a low defect area is formed in the vicinity of an interface between the CZ bulk substrate and the gate insulation film.

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