Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-03
2000-11-14
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438268, 438272, 438273, H01L 21336
Patent
active
061469475
ABSTRACT:
In an insulated gate type field effect transistor and a manufacturing method of the same, a diffusion region is formed in a semiconductor substrate under an oxidizing atmosphere by thermal diffusion, and a first conductivity type semiconductor layer is formed on the semiconductor substrate by vapor-phase epitaxy after the formation of the diffusion region. Thereafter, the surface of the semiconductor layer is flattened, and a gate insulating film and a gate electrode are formed on the flattened semiconductor layer. Further, a well region as well as a source region are formed in the semiconductor layer to form an insulated gate type field effect transistor. As the surface of the semiconductor layer in which the insulated gate type field effect transistor is formed is flattened, even if the embedded region is formed in the wafer, the gate-source insulation withstand voltage characteristic can be prevented from being deteriorated.
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Iida Makio
Okabe Naoto
Tokura Norihito
Elms Richard
Lebentritt Michael S.
Nippondenso Co. Ltd.
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