Insulated gate transistor

Details Insulated gate transistor Insulated gate transistor

2007-07-31

2007-07-31

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21384

Reexamination Certificate

active

10976855

ABSTRACT:
A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.

REFERENCES:
patent: 4893165 (1990-01-01), Miller et al.
patent: 5385855 (1995-01-01), Brown et al.
patent: 5567634 (1996-10-01), Hebert et al.
patent: 5721148 (1998-02-01), Nishimura
patent: 6194741 (2001-02-01), Kinzer et al.
patent: 6600192 (2003-07-01), Sugawara et al.
patent: 57-194583 (1982-11-01), None
patent: 2-1985 (1990-01-01), None
patent: 4-286163 (1992-10-01), None
patent: 7-321304 (1995-12-01), None
patent: 9-260602 (1997-10-01), None
patent: 10-74939 (1998-03-01), None
patent: 11-54519 (1999-02-01), None

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