Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-07-23
2011-10-18
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S229000, C257S330000, C257SE21643, C257SE29318
Reexamination Certificate
active
08039346
ABSTRACT:
An insulated gate silicon carbide semiconductor device is provided having small on-resistance in a structure obtained by combining the SIT and MOSFET structures having normally-off operation. The device includes an n−semiconductor layer on an SiC n+substrate, a p-type base region and highly doped p-region both buried in the layer, a trench from the semiconductor layer surface to the p-base region, an n+first source region in the surface of a p-type base region at the bottom of the trench, a p-type channel region in the surface of the sidewall of the trench, one end of which contacts the first source region, a gate electrode contacting the trench-side surface of the channel region via a gate insulating film, and a source electrode contacting the trench-side surface of the gate electrode via an interlayer insulating film and contacting the exposed first source region and p-base region at the bottom of the trench.
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Fuji Electric & Co., Ltd.
Landau Matthew
McCall Shepard Sonya
Rossi Kimms & McDowell LLP
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