Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-15
2005-03-15
Brock, II, Paul E (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S276000, C438S289000, C257S345000
Reexamination Certificate
active
06867085
ABSTRACT:
Dot-pattern-like impurity regions are artificially and locally formed in a channel forming region. The impurity regions restrain the expansion of a drain side depletion layer toward the channel forming region to prevent the short channel effect. The impurity regions allow a channel width W to be substantially fined, and the resultant narrow channel effect releases the lowering of a threshold value voltage which is caused by the short channel effect.
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Fukunaga Takeshi
Ohtani Hisashi
Yamazaki Shunpei
Brock II Paul E
Semiconductor Energy Laboratory Co,. Ltd.
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