Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-28
2011-12-13
Li, Meiya (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257SE21429, C438S270000, C438S272000
Reexamination Certificate
active
08076718
ABSTRACT:
The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.
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Hamada Kimimori
Kuroyanagi Akira
Miyagi Kyosuke
Okura Yasushi
Takaya Hidefumi
Denso Corporation
Kenyon & Kenyon LLP
Li Meiya
Toyota Jidosha & Kabushiki Kaisha
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