Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-21
2008-08-19
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C257SE21629
Reexamination Certificate
active
07413954
ABSTRACT:
A capacity layer is formed of non-doped polysilicon. Unlike capacity layers formed of an oxide film, generation of seams and the like can be suppressed and thereby a stable capacity layer can be formed. Moreover, polysilicon used as a capacity layer may be doped polysilicon, and an oxide film formed on the surface of the polysilicon also serves as a capacity film. Thus, provision of an insulated gate device featuring low capacity is made possible.
REFERENCES:
patent: 5283201 (1994-02-01), Tsang et al.
patent: 2004/0166636 (2004-08-01), Darwish
patent: 1167787 (1999-03-01), None
patent: 274397 (2001-10-01), None
patent: 158268 (2003-05-01), None
Iwata Satoshi
Kubo Hirotoshi
Onda Masahito
Saito Hiroaki
Tojo Junichiro
Chaudhari Chandra
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
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