Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

1997-09-25

1999-12-14

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438243, 438245, 438271, 438268, H01L 218234, H01L 218244

Patent

active

060016787

ABSTRACT:
It is an object to obtain an insulated gate semiconductor device with an unreduced current value capable of being turned off while adopting structure for reducing the ON voltage, and a manufacturing method thereof. An N layer (43) is provided in close contact on a surface of an N.sup.- layer (42), a P base layer (44) is provided in close contact on the surface of the N layer (43), and a trench (47) which passes at least through the P base layer (44) is provided, and a gate electrode (49) is provided in the trench (47) through a gate insulating film (48). The carrier distribution of the N.sup.- layer (42) becomes closer to the carrier distribution of a diode, and an ON voltage is decreased and a current value capable of being turned off is not decreased when turning off. Accordingly, there are provided an insulated gate semiconductor device with low power consumption, small size, large capacity and high reliability.

REFERENCES:
patent: 5171696 (1992-12-01), Hagino
patent: 5298780 (1994-03-01), Harada
patent: 5304821 (1994-04-01), Hagino
patent: 5326993 (1994-07-01), Iwamuro
patent: 5352915 (1994-10-01), Hutchings et al.
patent: 5357125 (1994-10-01), Kumagi
patent: 5489787 (1996-02-01), Amaratunga et al.
patent: 5541122 (1996-07-01), Tu et al.
patent: 5751024 (1998-05-01), Takahashi
Shenai et al, "Optimum Low-Voltage Silicon Power Switches Fabridated Using Scaled Trench MOS Technologies" IEDM 90-793-797, 1990.
Chang et al, "500-V n-Channel Insulated-Gate Bipolar Transistor with a Trench Gate Structure," IEEE Trans. Electron Devices vol. 36, No. 9, pp. 1824-1829, 1989.
Syau et al, "Comparison of Ultralow Specific On-Resistance UMOSFET Structures: The ACCUFET, EXTFET, INFET, and Conventional UMOSFET's, " IEEE Trans. on Electron Devices vol. 41, No. 5, pp. 800-808, 1994.
Patent Abstracts of Japan, vol. 12, No. 420 (E-679), Nov. 8, 1988, JP 63-157478, Jun. 30, 1988.
Patent Abstracts of Japan, vol. 18, No. 531 (E-1614), Oct. 7, 1994, JP 6-188423, Jul. 8, 1994.

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