Insulated gate semiconductor device

Details Insulated gate semiconductor device Insulated gate semiconductor device

1992-12-10

1993-12-14

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257389, 257395, 257356, H01L 2906, H01L 2978, H01L 2920, H01L 2922

Patent

active

052705668

ABSTRACT:
A MOS device comprising a parallel array of a plurality of unit structures on a substrate, each unit structure including a first semiconductor layer of a first conductivity type, an oxide layer disposed on a major surface of the first semiconductor layer, a control electrode formed on the oxide layer, and second and third semiconductor layers separated from each other by the first semiconductor layer. The electric current flowing through a surface layer in contact with the oxide layer is controlled by the voltage applied to the control electrode, and the oxide layer is relatively thick between the first semiconductor layer and the control electrode on the periphery of the unit structures located on the periphery of the substrate and relatively thin between the first semiconductor layer and control electrode in other regions of the MOS device.

REFERENCES:
patent: 3793721 (1971-08-01), Wakefield et al.
patent: 4654121 (1987-03-01), Miller et al.
patent: 4819045 (1989-04-01), Murakami
patent: 4825278 (1989-04-01), Hillenius et al.
patent: 4855800 (1989-08-01), Esquivel et al.
patent: 4918510 (1990-04-01), Pfiester
patent: 4926222 (1990-05-01), Kosa et al.
IEEE Transactions of Electron Devices, vol. 35, No. 2 Feb. 1989, pp. 230-239, New York, U.S.; C. Y. Lu et al.: "An Analog/Digital BCDMOS Technology with Dielectric Isolation--Devices and Processes".

Affiliated with

Also associated with

Rating

Insulated gate semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1707886