Insulated gate field effect transistor with an anodic oxidized g

Details Insulated gate field effect transistor with an anodic oxidized g Insulated gate field effect transistor with an anodic oxidized g

1996-01-19

1997-09-30

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257347, 257900, H01L 2976, H01L 31036, H01L 2701, H01L 27088

Patent

active

056729006

ABSTRACT:
A thin-film transistor (TFT) comprising an active region provided on a substrate and a gate electrode on the active region. A porous anodic oxide film is provided on the sides and top of the gate electrode where the lateral thickness of the anodic oxide provided on the side surface is larger than the vertical thickness of the anodic oxide provided on the top surface or where a first anodic oxide is provided on both the top and side surfaces and a second anodic oxide is provided on the side surfaces wherein the first anodic oxide is interposed between the second anodic oxide and the side surfaces of the gate electrode.

REFERENCES:
patent: 5289030 (1994-02-01), Yamazaki et al.

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