Insitu post atomic layer deposition destruction of active...

Details Insitu post atomic layer deposition destruction of active... Insitu post atomic layer deposition destruction of active...

2005-01-18

2005-01-18

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C438S762000, C438S765000, C438S768000, C438S769000, C438S778000, C438S903000, C438S905000, C438S913000, C438S935000

Reexamination Certificate

active

06844260

ABSTRACT:
Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.

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