Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1998-09-30
2000-06-06
King, Roy V.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
4272557, 427255391, 427255393, 427569, 427124, 438683, 438592, 438630, 438649, B05D 512
Patent
active
060715529
ABSTRACT:
The present invention provides a method of forming a contact structure comprised of: a silicon substrate, a titanium silicide layer, a barrier layer (i.e., TiN or TiNO), and a metal layer (e.g., Al or W). There are three embodiments of the invention for forming the titanium silicide layer and two embodiments for forming the barrier layer (TiN or TiNO). The first embodiment for forming a TiSix layer comprises three selective deposition steps with varying TiCl4: SiH4 ratios. After the TiSix contact layer is formed a barrier layer and a metal plug layer are formed thereover to form a contact structure. The method comprises forming a barrier layer 140 over the silicide contact layer 126; and forming a metal plug 160 over the TiN barrier layer 140. The metal plug 160 is composed of Al or W.
REFERENCES:
patent: 4851369 (1989-07-01), Ellwanger et al.
patent: 4926237 (1990-05-01), Sun et al.
patent: 5103272 (1992-04-01), Nishiyama
patent: 5389575 (1995-02-01), Chin et al.
patent: 5545592 (1996-08-01), Iacoponi
patent: 5605724 (1997-02-01), Hong et al.
patent: 5880505 (1999-03-01), Fujii et al.
Ackerman Stephen B.
Industrial Technology Research Institute
King Roy V.
Saile George O.
Stoffel William J.
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