Method of forming aluminum based pattern

Details Method of forming aluminum based pattern Method of forming aluminum based pattern

1993-03-24

1995-01-03

Thomas, Tom

Fishing, trapping, and vermin destroying

156643, 156646, 156665, 437225, H01L 2144, H01L 2148

Patent

active

053786530

ABSTRACT:
A method of forming an Al-based pattern whereby dry etching with high selectivity of an Al-based metallization layer and effective preventive measures for after-corrosion can be realized. An Al-based multilayer film is etched, for instance, by using an SOCl.sub.2 (thionyl chloride) / C.sub.2 mixed gas. At this time, thionyl and a C--S bond are introduced into a carbonaceous polymer CCl.sub.x derived from decomposition products of a resist mask, so as to obtain strong chemical bond and electrostatic adsorption force, thereby raising etching durability. Therefore, incident ion energy necessary For anisotropic processing and the deposit amount of the carbonaceous polymer can be reduced, and resist selectivity and selectivity to an underlying layer can be improved. Also, particle pollution and after-corrosion can be controlled. If a compound such as S.sub.2 F.sub.2 capable of releasing free S on dissociation due to electric discharge is added to SOCl.sub.2, pollution in a process can be reduced further. If, after the etching, residual chlorine is removed by O.sub.2 plasma ashing or plasma processing using a fluorine based gas, durability to after-corrosion can be improved further.

REFERENCES:
patent: 2795491 (1957-06-01), Newman et al.
patent: 4980752 (1990-12-01), Jones, Jr.
K. Ninomiya et al., "Role of Sulfur Atoms in Microwave Plasma Etching of Silicon", J. Applied Phys., vol. 62, No. 4, Aug. 15, 1987, pp. 1459-1468.
S. Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Sunset Beach, Calif., 1986, pp. 564-565.
Sawai et al., "Reaction Mechanism of Highly Selective Etching of AlSiCu Using Brominated Gas Plasma", 1989 Dry Process Symposium, Paper 11-2, pp. 45-50.
Semiconductor World, Dec. 1990, pp. 103-107.
Samukawa et al., "Al-4%Cu Dry Etching Technology", Extended Abstract of the 33rd Integrated Circuit Symposium, 1987, pp. 115-120.

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